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FQD3N60CTM-WS دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FQD3N60CTM-WS |
|---|---|
| حجم فایل | 73.912 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت FQD3N60CTM-WS |
دانلود دیتاشیت |
|---|
سایر مستندات
FQD3N60CTM_WS 8 pages
FQD3N60CTM-WS 8 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQD3N60CTM-WS
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 50W
- Total Gate Charge (Qg@Vgs): 14nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 565pF@25V
- Continuous Drain Current (Id): 2.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 5pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8Ω@10V,1.2A
- Package: DPAK-3
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FQD3
- detail: N-Channel 600V 2.4A (Tc) 50W (Tc) Surface Mount D-Pak